nte5850 thru NTE5869 silicon power rectifier diode, 6 amp description and features : the nte5850 through NTE5869 are low power general purpose rectifier diodes in a do4 type pack- age designed for battery chargers, converters, power supplies, and machine tool controls. features : high surge current capability high voltage available designed for a wide range of applications available in anode?to?case or cathode?to?case style ratings and characteristics : average forward current (t c = +158 c max), i f(av) 6a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum forward surge current, i fsm 50hz 134a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60hz 141a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . fusing current, i 2 t 50hz 90a 2 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60hz 141a 2 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . fusing current, i 2 t 1270a 2 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum reverse recovery voltage range, v rrm 50 to 1000v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . voltage ratings : (t j = +175 c) nte type number v rrm ?max v rsm ?max v r ?max. v r(sr) i rm ?max cathode to case anode to case repetitive peak reverse volt. (v) non?repetitive peak reverse voltage (v) direct reverse voltage (v) minimum avalanche voltage (v) reverse current rated v rrm (ma) 5850 5851 50 75 50 ? 12 5852 5853 100 150 100 ? 12 5854 5855 200 275 200 ? 12 5856 5857 300 385 300 ? 12 5858 5859 400 500 400 500 12 5860 5861 500 613 50 613 12 5862 5863 600 725 600 725 12 5866 5867 800 950 800 950 12 5868 5869 1000 1200 1000 1200 12
electrical specifications: parameter symbol test conditions rating unit maximum average forward current i f (av) 180 sinusoidal condition, t c = +158 c max 6 a maximum rms forward current i f(rms) 9.5 a maximum peak one ? cycle i fsm t = 10ms sinusoidal half wave, 134 a non ? repetitive surge current t = 8.3ms no voltage reapplied 141 a t = 10ms 100% rated voltage reapplied, c 167 a maximum i 2 t for individual device i 2 t t = 10ms 100% rated voltage reapplied, c 116 a 2 s maximum i 2 t i 2 t t = 0.1 to 10ms, no voltage reapplied, note 1 1270 a 2 t maximum peak forward voltage v fm i fm = 19a, t j = +25 c 1.10 v maximum value of threshold voltage v m (to) t j = +175 c 0.60 v maximum value of forward slope resistance r t t j = +175 c 17.2 m ? note 1. i 2 t for time t x = i 2 t t x thermal ? mechanical specifications: parameter symbol test conditions rating unit maximum operation junction temperature t j ? 65 to + 175 c maximum storage temperature t stg ? 65 to + 200 c maximum internal thermal resistance junction ? to ? case r thjc dc operation 2.5 k/w thermal resistance, case ? to ? sink r thcs mounting surface flat, smooth and greased 0.25 k/w mounting torque t non ? lubricated threads 1.2 ? 1.5 (10.5 ? 13.5) m ? n (in ? lb) approximate weight wt 11 (0.25) g (oz) .060 (1.52) dia min .405 (10.3) max 1.250 (31.75) max .437 (11.1) max .175 (4.45) max .424 (10.8) dia max .250 (6.35) max .453 (11.5) max 10 ? 32 nf ? 2a
|
